Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Second Edition, Three Volume Set captures the breadth of this important field and presents it in a single source to the large audience who study, make, and use semiconductor devices. Written and edited by a truly international team of experts and newly updated to capture key advancements in the field, this work delivers an objective yet cohesive review of the semiconductor world.The work is divided into three sections, fully updated and expanded from the first edition. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics, especially quantum phenomena. The second section deals largely with the transformation of the conceptual framework of solid-state physics into devices and systems, which require the growth of high-purity or doped, bulk and epitaxial materials with low defect density and well-controlled electrical and optical properties. The third section is devoted to design, fabrication and assessment of discrete and integrated semiconductor devices. It will cover the entire spectrum of devices we see all around us, for telecommunications, computing, automation, displays, illumination and consumer electronics.
1. 1.04.2 QHE—Introduction - p. 136 2. 1.04.3 Integer quantum Hall effect—experiments - p. 143 3. 1.04.4 Integer quantum Hall effect—theories - p. 147 4. 1.04.5 Localization problem - p. 153 5. 1.04.6 QHE edge states and edge transport - p. 157 6. 1.04.7 QHE resistance standard, the fine-structure constant and new SI - p. 159 7. 1.04.8 Breakdown of QHE - p. 160 8. 1.04.9 Quantum dots and periodically modulated systems in strong magnetic fields - p. 161 9. 1.04.10 Anomalous quantum Hall effect and spin quantum Hall effect - p. 163 10. 1.04.11 Integer vs fractional quantum Hall effects - p. 165 11. 1.04.12 QHE in graphene - p. 167 12. 1.04.13 QHE in light-matter coupled systems—Floquet topological insulator - p. 179 13. 1.04.14 Summary - p. 188 14. References - p. 187 15. Further reading - p. 187 16. 1.05. Fractional quantum Hall effects and composite fermions - p. 190 17. 1.06. Thermal conductivity and thermoelectric power of semiconductors - p. 203 18. 1.07. Electronic states and transport properties of carbon crystalline: Graphene, nanotube, and graphite - p. 242 19. 1.08. Angle-resolved photoemission spectroscopy of graphene, graphite, and related compounds - p. 264 20. 1.09. Electronic properties of dopants and defects in widegap and ultra-widegap semiconductors and alloys - p. 290 21. 1.10. Two dimensional semiconductors: Optical and electronic properties - p. 312 22. 1.11. Topological band structure - p. 352 23. Abstract - p. 352 24. 1.11.1 Introduction - p. 353 25. 1.11.2 Band theory from the perspective of group theory - p. 354 26. 1.11.3 Topology: Berry phase, Chern number and Wilson loop - p. 366 27. 1.11.4 Topological quantum chemistry - p. 369 28. 1.11.5 Examples - p. 373 29. 1.11.6 Conclusions - p. 387 30. References - p. 387 31. 1.12. Oxide semiconductors for advanced CMOS - p. 389 32. 1.13. Electronic states and transport in quantum-dots - p. 414 33. 1.14. Contact hyperfine interactions in semiconductor heterostructures - p. 433 34. 1.15. Optical properties of semiconductors - p. 461 35. 1.16. High density excitons in semiconductors - p. 493 36. Abstract - p. 493 37. 1.16.1 Excitons in semiconductors - p. 494 38. 1.16.2 Biexciton - p. 499 39. 1.16.3 Exciton-exciton interaction and optical nonlinearity - p. 511 40. 1.16.4 High density phenomena - p. 523 41. 1.16.5 Conclusion - p. 540 42. References - p. 540 43. 1.17. Magneto-spectroscopy of semiconductors - p. 544 44. 1.17.1 Magneto-transport spectroscopy - p. 545 45. 1.17.2 Magneto-optical spectroscopy - p. 571 46. References - p. 625 47. 1.18. Bloch oscillations and ultrafast coherent optical phenomena - p. 631 48. 1.19. Generation of indistinguishable photons with semiconductor quantum dots - p. 689 49. Abstract - p. 689 50. 1.19.1 Introduction - p. 690 51. 1.19.2 Fundamentals of epitaxial quantum dots - p. 691 52. 1.19.3 Quantum dot growth and device technology - p. 692 53. 1.19.4 Fundamental quantum optical properties of quantum dots - p. 697 54. 1.19.5 Photon indistinguishability via resonant optical excitation schemes - p. 703 55. 1.19.6 Photon indistinguishability in application relevant scenarios - p. 714 56. 1.19.7 Open questions and future directions - p. 724 57. 1.19.8 Conclusions - p. 726 58. References - p. 727 59. 1.20. Ultrafast semiconductor phenomena/THz properties - p. 733 60. 2.01. Bulk crystal growth of semiconductors: An overview - p. 754 61. 2.02. Bulk growth of crystals of III–V compound semiconductors - p. 754 62. 2.03. Growth of bulk GaN crystals for the production of substrates - p. 41 63. 2.04. Growth of bulk β-Ga2O3 single crystals - p. 72 64. 2.05. Growth of bulk AlN crystals - p. 132 65. 2.06. The thermodynamics and kinetics of AlGaN growth - p. 133 66. 2.07. Epitaxial growth of gallium oxide and related materials by CVD methods - p. 133 67. 2.08. Fundamentals of pulsed laser deposition, advanced developments and implementation of combinatorial material synthesis, and its application to the growth of Ga2O3 and related alloys - p. 202 68. 2.09. Molecular beam epitaxy: An overview - p. 262 69. 2.10. Integration of dissimilar materials - p. 289 70. 2.11. Growth of 2D semiconductors and topological insulators - p. 311 71. 2.12. Semiconductor nanowires and sub-micrometer platelets for nitride-based nano-LED applications - p. 351 72. 2.13. Colloidal quantum dots for displays - p. 413 73. 2.14. Nanostructures of metal oxides - p. 413 74. 2.15. Characterization of semiconductors by spectroscopic ellipsometry - p. 460 75. Abstract - p. 460 76. Acknowledgments - p. 460 77. Glossary - p. 460 78. 2.15.1 Introduction - p. 460 79. 2.15.2 Ellipsometry - p. 460 80. 2.15.3 Data modeling - p. 460 81. 2.15.4 Permittivity and permeability tensors - p. 460 82. 2.15.5 Optical constants, absorption coefficient, and Beer-Lambert law - p. 460 83. 2.15.6 Matrix formalism - p. 460 84. 2.15.7 Model dielectric (permittivity) function approaches - p. 460 85. 2.15.8 Magnetic-field induced dielectric function models - p. 460 86. 2.15.9 Model magnetic (permeability) function approaches - p. 460 87. 2.15.10 Instruments - p. 460 88. 2.15.11 Examples - p. 460 89. 2.15.12 Conclusion/summary/outlook - p. 460 90. References - p. 460 91. 2.16. Characterization of semiconductors by synchrotron-based techniques - p. 460 92. 2.17. Ion implantation in wide and ultra-wide bandgap semiconductors - p. 543 93. 2.18. Contacts to wide band gap (WBG) and ultra-wide band gap (UWBG) semiconductors for power electronics devices - p. 543 94. 3.01. Ultra-scaled CMOS devices and technology - p. 630 95. 3.02. GaAs- and InP-based high electron mobility transistors - p. 630 96. 3.03. High-speed InP-based heterojunction bipolar transistors - p. 630 97. 3.04. III–V Compound avalanche photodiodes - p. 630 98. 3.05. Advances in infrared linear mode avalanche photodiodes based on antimonide based semiconductors - p. 131 99. 3.06. Antimony-based Type-II superlattice infrared detectors: An overview - p. 131 100. 3.07. Quantum dot infrared photodetectors - p. 131 101. 3.08. High performance quantum dot lasers - p. 131 102. 3.09. Metal halide perovskite solar cells - p. 263 103. 3.10. Disordering of quantum structures for optoelectronic device integration - p. 263 104. 3.11. III-Nitride ultraviolet and visible LEDs - p. 263 105. 3.12. III-Nitride-based short-wavelength ultraviolet light sources - p. 263 106. 3.13. Terahertz detection devices - p. 263 107. Abstract - p. 263 108. Acknowledgments - p. 263 109. Glossary - p. 263 110. 3.13.1 Introduction to terahertz - p. 263 111. 3.13.2 Free-carrier based terahertz detectors - p. 263 112. 3.13.3 Terahertz quantum well detectors (QWIPs) - p. 263 113. 3.13.4 Terahertz quantum dot detectors - p. 263 114. 3.13.5 Novel terahertz ideas - p. 263 115. 3.13.6 Conclusion - p. 263 116. References - p. 263 117. 3.14. Micro- and nanostructured semiconductor materials for flexible and stretchable electronics - p. 263 118. 3.15. MEMS and acoustic resonators and filters - p. 263 119. 3.16. Memristive devices - p. 263 120. 3.17. Molecular computing using quantum-dot cellular automata - p. 263 121. 3.18. Semiconductor quantum bits: Structures and principles - p. 263 122. Author Index - p. 263 123. Author Index - p. 263
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Second Edition, Three Volume Set captures the breadth of this important field and presents it in a single source to the large audience who study, make, and use semiconductor devices. Written and edited by a truly international team of experts and newly updated to capture key advancements in the field, this work delivers an objective yet cohesive review of the semiconductor world.The work is divided into three sections, fully updated and expanded from the first edition. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics, especially quantum phenomena. The second section deals largely with the transformation of the conceptual framework of solid-state physics into devices and systems, which require the growth of high-purity or doped, bulk and epitaxial materials with low defect density and well-controlled electrical and optical properties. The third section is devoted to design, fabrication and assessment of discrete and integrated semiconductor devices. It will cover the entire spectrum of devices we see all around us, for telecommunications, computing, automation, displays, illumination and consumer electronics.
1. 1.04.2 QHE—Introduction - p. 136 2. 1.04.3 Integer quantum Hall effect—experiments - p. 143 3. 1.04.4 Integer quantum Hall effect—theories - p. 147 4. 1.04.5 Localization problem - p. 153 5. 1.04.6 QHE edge states and edge transport - p. 157 6. 1.04.7 QHE resistance standard, the fine-structure constant and new SI - p. 159 7. 1.04.8 Breakdown of QHE - p. 160 8. 1.04.9 Quantum dots and periodically modulated systems in strong magnetic fields - p. 161 9. 1.04.10 Anomalous quantum Hall effect and spin quantum Hall effect - p. 163 10. 1.04.11 Integer vs fractional quantum Hall effects - p. 165 11. 1.04.12 QHE in graphene - p. 167 12. 1.04.13 QHE in light-matter coupled systems—Floquet topological insulator - p. 179 13. 1.04.14 Summary - p. 188 14. References - p. 187 15. Further reading - p. 187 16. 1.05. Fractional quantum Hall effects and composite fermions - p. 190 17. 1.06. Thermal conductivity and thermoelectric power of semiconductors - p. 203 18. 1.07. Electronic states and transport properties of carbon crystalline: Graphene, nanotube, and graphite - p. 242 19. 1.08. Angle-resolved photoemission spectroscopy of graphene, graphite, and related compounds - p. 264 20. 1.09. Electronic properties of dopants and defects in widegap and ultra-widegap semiconductors and alloys - p. 290 21. 1.10. Two dimensional semiconductors: Optical and electronic properties - p. 312 22. 1.11. Topological band structure - p. 352 23. Abstract - p. 352 24. 1.11.1 Introduction - p. 353 25. 1.11.2 Band theory from the perspective of group theory - p. 354 26. 1.11.3 Topology: Berry phase, Chern number and Wilson loop - p. 366 27. 1.11.4 Topological quantum chemistry - p. 369 28. 1.11.5 Examples - p. 373 29. 1.11.6 Conclusions - p. 387 30. References - p. 387 31. 1.12. Oxide semiconductors for advanced CMOS - p. 389 32. 1.13. Electronic states and transport in quantum-dots - p. 414 33. 1.14. Contact hyperfine interactions in semiconductor heterostructures - p. 433 34. 1.15. Optical properties of semiconductors - p. 461 35. 1.16. High density excitons in semiconductors - p. 493 36. Abstract - p. 493 37. 1.16.1 Excitons in semiconductors - p. 494 38. 1.16.2 Biexciton - p. 499 39. 1.16.3 Exciton-exciton interaction and optical nonlinearity - p. 511 40. 1.16.4 High density phenomena - p. 523 41. 1.16.5 Conclusion - p. 540 42. References - p. 540 43. 1.17. Magneto-spectroscopy of semiconductors - p. 544 44. 1.17.1 Magneto-transport spectroscopy - p. 545 45. 1.17.2 Magneto-optical spectroscopy - p. 571 46. References - p. 625 47. 1.18. Bloch oscillations and ultrafast coherent optical phenomena - p. 631 48. 1.19. Generation of indistinguishable photons with semiconductor quantum dots - p. 689 49. Abstract - p. 689 50. 1.19.1 Introduction - p. 690 51. 1.19.2 Fundamentals of epitaxial quantum dots - p. 691 52. 1.19.3 Quantum dot growth and device technology - p. 692 53. 1.19.4 Fundamental quantum optical properties of quantum dots - p. 697 54. 1.19.5 Photon indistinguishability via resonant optical excitation schemes - p. 703 55. 1.19.6 Photon indistinguishability in application relevant scenarios - p. 714 56. 1.19.7 Open questions and future directions - p. 724 57. 1.19.8 Conclusions - p. 726 58. References - p. 727 59. 1.20. Ultrafast semiconductor phenomena/THz properties - p. 733 60. 2.01. Bulk crystal growth of semiconductors: An overview - p. 754 61. 2.02. Bulk growth of crystals of III–V compound semiconductors - p. 754 62. 2.03. Growth of bulk GaN crystals for the production of substrates - p. 41 63. 2.04. Growth of bulk β-Ga2O3 single crystals - p. 72 64. 2.05. Growth of bulk AlN crystals - p. 132 65. 2.06. The thermodynamics and kinetics of AlGaN growth - p. 133 66. 2.07. Epitaxial growth of gallium oxide and related materials by CVD methods - p. 133 67. 2.08. Fundamentals of pulsed laser deposition, advanced developments and implementation of combinatorial material synthesis, and its application to the growth of Ga2O3 and related alloys - p. 202 68. 2.09. Molecular beam epitaxy: An overview - p. 262 69. 2.10. Integration of dissimilar materials - p. 289 70. 2.11. Growth of 2D semiconductors and topological insulators - p. 311 71. 2.12. Semiconductor nanowires and sub-micrometer platelets for nitride-based nano-LED applications - p. 351 72. 2.13. Colloidal quantum dots for displays - p. 413 73. 2.14. Nanostructures of metal oxides - p. 413 74. 2.15. Characterization of semiconductors by spectroscopic ellipsometry - p. 460 75. Abstract - p. 460 76. Acknowledgments - p. 460 77. Glossary - p. 460 78. 2.15.1 Introduction - p. 460 79. 2.15.2 Ellipsometry - p. 460 80. 2.15.3 Data modeling - p. 460 81. 2.15.4 Permittivity and permeability tensors - p. 460 82. 2.15.5 Optical constants, absorption coefficient, and Beer-Lambert law - p. 460 83. 2.15.6 Matrix formalism - p. 460 84. 2.15.7 Model dielectric (permittivity) function approaches - p. 460 85. 2.15.8 Magnetic-field induced dielectric function models - p. 460 86. 2.15.9 Model magnetic (permeability) function approaches - p. 460 87. 2.15.10 Instruments - p. 460 88. 2.15.11 Examples - p. 460 89. 2.15.12 Conclusion/summary/outlook - p. 460 90. References - p. 460 91. 2.16. Characterization of semiconductors by synchrotron-based techniques - p. 460 92. 2.17. Ion implantation in wide and ultra-wide bandgap semiconductors - p. 543 93. 2.18. Contacts to wide band gap (WBG) and ultra-wide band gap (UWBG) semiconductors for power electronics devices - p. 543 94. 3.01. Ultra-scaled CMOS devices and technology - p. 630 95. 3.02. GaAs- and InP-based high electron mobility transistors - p. 630 96. 3.03. High-speed InP-based heterojunction bipolar transistors - p. 630 97. 3.04. III–V Compound avalanche photodiodes - p. 630 98. 3.05. Advances in infrared linear mode avalanche photodiodes based on antimonide based semiconductors - p. 131 99. 3.06. Antimony-based Type-II superlattice infrared detectors: An overview - p. 131 100. 3.07. Quantum dot infrared photodetectors - p. 131 101. 3.08. High performance quantum dot lasers - p. 131 102. 3.09. Metal halide perovskite solar cells - p. 263 103. 3.10. Disordering of quantum structures for optoelectronic device integration - p. 263 104. 3.11. III-Nitride ultraviolet and visible LEDs - p. 263 105. 3.12. III-Nitride-based short-wavelength ultraviolet light sources - p. 263 106. 3.13. Terahertz detection devices - p. 263 107. Abstract - p. 263 108. Acknowledgments - p. 263 109. Glossary - p. 263 110. 3.13.1 Introduction to terahertz - p. 263 111. 3.13.2 Free-carrier based terahertz detectors - p. 263 112. 3.13.3 Terahertz quantum well detectors (QWIPs) - p. 263 113. 3.13.4 Terahertz quantum dot detectors - p. 263 114. 3.13.5 Novel terahertz ideas - p. 263 115. 3.13.6 Conclusion - p. 263 116. References - p. 263 117. 3.14. Micro- and nanostructured semiconductor materials for flexible and stretchable electronics - p. 263 118. 3.15. MEMS and acoustic resonators and filters - p. 263 119. 3.16. Memristive devices - p. 263 120. 3.17. Molecular computing using quantum-dot cellular automata - p. 263 121. 3.18. Semiconductor quantum bits: Structures and principles - p. 263 122. Author Index - p. 263 123. Author Index - p. 263
