Advances in Computers, Volume 118, the latest volume in this innovative series published since 1960, presents detailed coverage of new advancements in computer hardware, software, theory, design and applications. Chapters in this updated release include Introduction to non-volatile memory technologies, The emerging phase-change memory, Phase-change memory architectures, Inter-line level schemes for handling hard errors in PCMs, Handling hard errors in PCMs by using intra-line level schemes, and Addressing issues with MLC Phase-change Memory.
1. Chapter One: Introduction to non-volatile memory technologies - p. page_x 2. Chapter Two: The emerging phase change memory - p. page_13 3. Chapter Three: Phase-change memory architectures - p. page_28 4. Chapter Four: Inter-line level schemes for handling hard errors in PCMs - p. page_48 5. Chapter Five: Handling hard errors in PCMs by using intra-line level schemes - p. page_78 6. Chapter Six: Addressing issues with MLC phase-change memory - p. page_109 7. About the authors - p. page_135
Advances in Computers, Volume 118, the latest volume in this innovative series published since 1960, presents detailed coverage of new advancements in computer hardware, software, theory, design and applications. Chapters in this updated release include Introduction to non-volatile memory technologies, The emerging phase-change memory, Phase-change memory architectures, Inter-line level schemes for handling hard errors in PCMs, Handling hard errors in PCMs by using intra-line level schemes, and Addressing issues with MLC Phase-change Memory.
1. Chapter One: Introduction to non-volatile memory technologies - p. page_x 2. Chapter Two: The emerging phase change memory - p. page_13 3. Chapter Three: Phase-change memory architectures - p. page_28 4. Chapter Four: Inter-line level schemes for handling hard errors in PCMs - p. page_48 5. Chapter Five: Handling hard errors in PCMs by using intra-line level schemes - p. page_78 6. Chapter Six: Addressing issues with MLC phase-change memory - p. page_109 7. About the authors - p. page_135
